Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth
نویسندگان
چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: Journal of Crystal Growth
سال: 2017
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2016.12.025